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Title
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Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices
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Type
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JournalPaper
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Keywords
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PbS QD, solar cell, SILAR technique, ZnO nanorods, power conversion efficiency
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Abstract
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Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbSQDas photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively
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Researchers
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(Second Researcher), Masood Mehrabian (First Researcher)
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