عنوان مجله
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Journal of Semiconductors
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چکیده
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Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption
and Reaction (SILAR) method. The UV–visible absorption studies have been used to calculate the band gap values
of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2C ions, the Fermi
level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped
ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm.
The peak positions of the luminescence showed a red shift as the Cu2C ion concentration was increased, which
indicates that the acceptor level (of Cu2C) is getting close to the valence band of ZnS.
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