عنوان مجله
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OPTICAL AND QUANTUM ELECTRONICS
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چکیده
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Three structures of lead halide perovskite quantum dot (QD) solar cells with different
absorbing layers of CsPbI3,
FAPbI3,
and CsPbI3/
FAPbI3
were simulated by SCAPS
(Abdelaziz et al. in Opt Mater 10:10973, 2020; Karthick et al. in Sol Energy205:349–357,
2020; Verschraegen and Burgelman in Thin Solid Films 515:6276–6279, 2007). First, a
device with a CsPbI3
QD absorber with a bandgap of 1.76 eV was simulated and power
conversion efficiency (PCE) of 11.92% was obtained. Then, a device with a different
absorber, the FAPbI3 QD layer with a band gap of 1.62 eV was simulated and we observed
that the PCE was reduced to 9.50%. The narrower bandgap perovskite (
FAPbI3) leads to an
increase in the short circuit current density from 13.22 mA/cm2 to 14.87 mA/cm2. Finally,
the bilayer of the CsPbI3/
FAPbI3 structure was used as absorbing layers and a PCE of
18.55% was obtained. This increase in power conversion efficiency could be attributed to
more efficient charge extraction. The physical mechanisms occurring in the devices were
discussed in detail.
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