مشخصات پژوهش

عنوان	Constructing PbS quantum dot sensitized ZnO nanorod array photoelectrodes for highly efficient photovoltaic devices
نوع پژوهش	مقاله چاپ‌شده در مجلات علمی
کلیدواژه‌ها	PbS QD, solar cell, SILAR technique, ZnO nanorods, power conversion efficiency
چکیده	Solar cells with ZnO film/ZnO nanorods (NRs)/PbS quantum dot (QD) photoelectrodes were constructed and various properties were studied. The ZnO NRs were grown for different periods varying from 0 (ZnO film) to 30 min (ZnO NR30) and the effect of growth period on the photovoltaic properties was investigated. The cell with ZnO film/PbSQDas photoelectrode showed the open circuit voltage VOC of 0.59 V, short circuit current density JSC of 10.06 mAcm−2, and the power conversion efficiency of 3.29% under one sun illumination (air mass 1.5 global illumination at 100 mWcm−2). In a device containing of ZnO film/ZnO NR10/PbS QD (as photoelectrode), mentioned photovoltaic parameters increased to 0.61 V, 10.47 mAcm−2 and 3.81%, respectively
پژوهشگران	ناصر قاسمیان (نفر دوم)، مسعود مهرابیان (نفر اول)