مشخصات پژوهش

عنوان	Optical and electrical properties of copper-incorporated ZnS films applicable as solar cell absorbers
نوع پژوهش	مقاله چاپ‌شده در مجلات علمی
کلیدواژه‌ها	ZnS; Cu2C doped ZnS; UV–visible absorption; photoluminescence
چکیده	Un-doped and Cu-doped ZnS (ZnS:Cu) thin films were synthesized by Successive Ion Layer Absorption and Reaction (SILAR) method. The UV–visible absorption studies have been used to calculate the band gap values of the fabricated ZnS:Cu thin films. It was observed that by increasing the concentration of Cu2C ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm. The peak positions of the luminescence showed a red shift as the Cu2C ion concentration was increased, which indicates that the acceptor level (of Cu2C) is getting close to the valence band of ZnS.
پژوهشگران	قاسم کاوه ای (نفر چهارم)، حسین شکروش آلقو (نفر سوم)، ذبیح اله استکی استکی (نفر دوم)، مسعود مهرابیان (نفر اول)