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چکیده
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We report on the influence of CsSnCl₃ incorporation into Cs₂TiBr₆- and Cs₂TiCl₆-based solar cells, focusing on carrier dynamics and interfacial behavior. Device characterization reveals that CsSnCl₃ modifies the apparent carrier concentration (Napp), impedance response, and depletion width, thereby reshaping the electrostatic environment of the junction. Napp–V analysis demonstrates enhanced carrier density and favorable band alignment in the heterostructures, reaching values as high as ∼2 × 10²³ cm⁻³ for Cs₂TiCl₆/CsSnCl₃, while Nyquist plots indicate increased interfacial complexity with recombination resistance up to ∼20,000 Ω·cm² and reduced recombination. Depletion width–voltage curves further confirm significant broadening of the space-charge region from ∼0.03 µm in single absorbers to ∼0.2 µm in CsSnCl₃-containing devices, supporting efficient charge separation. These combined effects lead to peak efficiencies of 10.68% for Cs₂TiBr₆/CsSnCl₃ and 11.48% for Cs₂TiCl₆/CsSnCl₃ heterostructures. This work provides the first systematic comparative investigation of CsSnCl₃ incorporation into Cs₂TiBr₆ and Cs₂TiCl₆ absorbers, establishing CsSnCl₃ as an active electrostatic modifier that broadens the depletion region, enhances carrier density, and reduces recombination through synergistic interfacial engineering.
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